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 2SK1952
Silicon N Channel MOS FET
Application
High speed power switching
TO-220FM
Features
* * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * Avalanche ratings
2
1
23
1
1. Gate 2. Drain 3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings 60 20 40 160 40 40 137 35 150 -55 to +150 Unit V V A A A A mJ W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C *** Value at Tch = 25 C, Rg 50
2SK1952
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 200 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A VGS = 10 V * ID = 20 A VGS = 4 V * ID = 20 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 1.5
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
20 -- -- V
--------------------------------------------------------------------------------------
-- -- 1.0 -- -- -- -- 0.018 10 250 2.25 0.022 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------
-- 0.023 0.028
--------------------------------------------------------------------------------------
Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 22 35 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1911 -- -- -- -- -- -- -- -- 3530 1480 300 33 155 450 220 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF / dt = 50 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
-- 120 -- ns
--------------------------------------------------------------------------------------


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